关于 TI100N60NWX
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TI100N60NWXWafer600V100A2.1V2.6V Model: TI100N60NWX Brand: Teno/TN Package: Wafer Polarity: IGBT Module Vces [V]: 600V IC@100 ° C [A]: 100A V CE (SAT), max: 2.1V VcE (SAT), typ: 2.6V Keywords: insulated gate bipolar transistor/IGBT/IGBT single tube/diode/reverse parallel diode. For details, please consult Mr. Ban at 18822865317Introduction to Production Line
TI100N60NWXWafer600V100A2.1V2.6V
model:TI100N60NWX
Brand:Teno/TN
Encapsulation:Wafer
Polarity:IGBT module
Vces [V]：600V
model:TI100N60NWX
Brand:Teno/TN
Encapsulation:Wafer
Polarity:IGBT module
Vces [V]：600V
IC@100°C [A]：100A
V CE(SAT),max：2.1V
VcE(SAT),type:2.6V
key word:Insulated gate bipolar transistor/IGBT/IGBT single tube/diode/reverse parallel diode
For details, please consult Mr. Ban at 18822865317
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