About AOGF40B65GQ1L
Product Code:
20+
Product model:
Proxy brand:
Bandai/iOS in the United States
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AOGF40B65GQ1LTO247 Single chip diode with IGBT reverse development 65080401.850.440.4386 Model: AOGF40B65GQ1L Brand: Bandai/OS Package: TO247 Configuration: Single chip diode with IGBT reverse development VCE (max) (V): 650 IC (max) 25 ℃ (A): 80 IC (max) 100 ℃ (A): 40 VCE (sat) (typ) (v): 1.85 EIN (typ) (MJ): 0.44 EOFF (typ) (MJ): 0.43 Qg (typ) (nc): 24 Keywords: FeijieshiIntroduction to Production Line
AOGF40B65GQ1LTO247 reverse development with IGBT monolithic diode 65080401.850.440.4386
model:AOGF40B65GQ1L
Brand:Bandai/iOS in the United States
Encapsulation:TO247
to configure:Reverse development with IGBT monolithic diode
VCE (max) (V):650
model:AOGF40B65GQ1L
Brand:Bandai/iOS in the United States
Encapsulation:TO247
to configure:Reverse development with IGBT monolithic diode
VCE (max) (V):650
IC (max) 25℃ (A)：80
IC (max)100℃ (A)：40
VCE(sat) (type) (v):1.85
EON (type) (MJ):0.44
EOFF (type) (MJ):0.43
Qg (type) (nc):24
key word:Feijieshi Technology, Shenzhen Feijieshi, IGBT power module, MOS transistor, power management IC, LED driver IC, MOSFETs, WIFI chip, low-voltage MOS, IGBT single tube/module, field-effect transistor, fast recovery Schottky, diode, semiconductor distribution,Bandai/iOS in the United Statesproduct
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